M09207 microsemi microwave products 75 technology d rive, lowell, ma. 01851, 978 - 442 - 5600, fax: 978 - 937 - 3748 page 1 k band waveguide modulator tm ? copyright e? 2008 rev : 2008 - 11 - 04 featu r es w aveguide assembly high modulation depth gaas pin diode low drive v oltage for low cost commercial applications specifications @ 25c insertion loss: 1.5 db t yp. @ 20 ma modulation depth: >90% t yp . frequency of operation: 24.125 ghz rf bandwidth: 200 mhz modulation rate: 1 hz C 100 khz drive v oltage: 1.3 v @ 20 ma, t yp. description microsemis mo9207 k - band modulator with integral gaas pi n diod e i s designe d fo r testin g d opple r transceiver s on the bench and in the field. v arious radar cross sections ma y b e simulate d b y attachin g di f feren t siz e hor n antennas to the modulato r . maximum ratings operating t emperature - 30c to +70c storage t emperature - 40c to +85c drive c urrent 50 ma
M09207 microsemi microwave products 75 technology d rive, lowell, ma. 01851, 978 - 442 - 5600, fax: 978 - 937 - 3748 page 2 k band waveguide modulator tm ? copyright e? 2008 rev : 2008 - 11 - 04 % modulation k band w aveguide modulator ( mo9207) t y pical performance characteristics 120 110 100 90 80 70 60 50 40 mo9207 k band w aveguide modulator 0.820 ( 20.83) max. ug - 595/u flange wr - 42 w aveguide solder pin 1.3 0 30 20 10 0 0 5 1 0 1 5 2 0 peak pin diode current ( ma) 0.875 ( 22.2) 4x 0.120 thru [3.05] 0.875 ( 22.2) 0.125 max. ( 3.18) max. ( 33.02) m odu l a t i o n c h a r a c t e r i s t i c modulator driver th e modulatio n drive r shoul d b e curren t limite d t o 5 0 ma puls e current . fo r a driv e curren t o f 2 0 m a fro m a 50 - ohm modulato r operatin g a t 5 volt s a 120 - oh m resisto r should be inserted in series with the pin diode. dimensions are in inches ( mm). flange mates with ug - 595/u wr - 42. delivered with grounded buss w ire for esd protection. on on + 0 o f f o f f positive drive is applied to the solder pin on top of unit. ground is any metallic contact on the waveguide.
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